050-7449 rev b 10-2005 typical performance curves apt15gp60bdq1 unit volts amps watts c the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency switchmode power supplies. low conduction loss 100 khz operation @ 400v, 19a low gate charge 200 khz operation @ 400v, 12a ultrafast tail current shutoff ssoa rated maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 600 3 4.5 6 2.2 2.7 2.1 275 3000 100 characteristic / test conditionscollector-emitter breakdown voltage (v ge = 0v, i c = 500a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges unit volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt15gp60bdq1 600 20 5627 65 65a @ 600v 250 -55 to 150 300 parametercollector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipationoperating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. to-247 g c e power mos 7 ? igbt g c e apt15gp60bdq1 600v downloaded from: http:///
050-7449 rev b 10-2005 apt15gp60bdq1 dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 15a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc = 400v v ge = 15v i c = 15a r g = 5 ? t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 15a r g = 5 ? t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay timecurrent rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 1685 210 15 7.5 5512 15 65 8 1229 60 130150 120 8 1270 90 130265 270 unit pf v nc a ns j ns j unitc/w gm min typ max .50 1.355.90 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. a combi device is used for the clamping diode as shown in the e on2 test circuit. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the specifications and information contained herein. downloaded from: http:///
050-7449 rev b 10-2005 typical performance curves apt15gp60bdq1 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 0 10 20 30 40 50 60 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 t j = 25c. 250s pulse test <0.5 % duty cycle t c =-55c t c =125c t c =25c v ce = 480v v ce = 300v v ce = 120v v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 15a t j = 25c t j = 25c t j = -55c t j = 125c t c =-55c t c =25c t c =125c 250s pulse test <0.5 % duty cycle i c = 7.5a i c = 15a i c =30a i c =30a i c = 7.5a 3025 20 15 10 50 100 8060 40 20 0 3.5 3 2.5 2 1.5 1 0.5 0 1.2 1.151.10 1.05 1.0 0.95 0.9 0.85 0.8 3025 20 15 10 50 1614 12 10 86 4 2 0 3.5 3 2.5 2 1.5 1 0.5 0 8070 60 50 40 30 20 10 0 i c = 15a downloaded from: http:///
050-7449 rev b 10-2005 apt15gp60bdq1 t j = 125c, v ge = 10v or 15v t j = 25c, v ge = 10v or 15v v ce = 400v r g = 5 ? l = 100 h v ge = 15v,t j =125c v ge = 15v v ge = 10v v ge =10v,t j =125c v ge = 10v,t j =25c v ge = 15v,t j =25c t j = 25c, v ge = 10v or 15v i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature r g = 5 ? , l = 100 h, v ce = 400v r g = 5 ? , l = 100 h, v ce = 400v v ce = 400v l = 100 hr g = 5 ? t j = 25 or 125c,v ge = 15v t j = 25 or 125c,v ge = 10v v ce = 400v v ge = +15v r g = 5 ? switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) v ce = 400v v ge = +15v t j = 125c v ce = 400v l = 100 hr g = 5 ? t j =125c, v ge =15v t j = 125c, v ge = 10v or 15v t j =125c,v ge =10v t j = 25c, v ge =10v t j = 25c, v ge =15v 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 0 5 10 15 20 25 30 5 10 15 20 25 30 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 1816 14 12 10 86 4 2 0 3025 20 15 10 50 700600 500 400 300 200 100 0 900800 700 600 500 400 300 200 100 0 8070 60 50 40 30 20 10 0 100 8060 40 20 0 700600 500 400 300 200 100 0 700600 500 400 300 200 100 0 e off 30a e on2 30a e on2 7.5a e off 15a e on2 15a e off 7.5a e on2 7.5a e off 15a e on2 15a e on2 30a e off 30a e off 7.5a v ce = 400v t j = 25c or 125c r g = 5 ? l = 100 h downloaded from: http:///
050-7449 rev b 10-2005 typical performance curves apt15gp60bdq1 4,0001,000 500100 5010 7060 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 c ies c oes c res 0.600.50 0.40 0.30 0.20 0.10 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fm i n ( f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = figure 19b, transient thermal impedance model 5101520253035404550 292100 5010 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 5 ? 0.2160.284 0.0060 0 0.164 power (watts) rc model junction temp. ( c) case temperature downloaded from: http:///
050-7449 rev b 10-2005 apt15gp60bdq1 t t j = 125 c gate voltage collector voltage collector current 0 90% 90% t d(off) t f 10% switching energy figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions 10% collector current collector voltage gate voltage t d(on) 90% t r 5% 5 % 10% switching energy t j = 125 c *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit i c a d.u.t. apt15df60 v ce figure 21, inductive switching test circuit v cc downloaded from: http:///
050-7449 rev b 10-2005 typical performance curves apt15gp60bdq1 characteristic / test conditionsmaximum average forward current (t c = 129c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 15a forward voltage i f = 30a i f = 15a, t j = 125c static electrical characteristics unit amps unit volts min typ max 2.02.5 1.6 apt15gp60bdq1 1530 110 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise specified. ultrafast soft recovery anti-parallel diode min typ max - 15 -1 9 -2 1 -2- - 105 - 250 -5- -5 5 - 420 -1 5 unit ns nc amps ns nc amps ns nc amps characteristicreverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 15a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 15a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 15a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 25a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.401.20 1.0 0.800.60 0.40 0.20 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 figure 25b, transient thermal impedance model 0.725 c/w 0.455 c/w 0.172 c/w 0.00166 j/ c 0.0381 j/ c 0.645 j/ c power (watts) junctiontemp ( c) rc model case temperature ( c) downloaded from: http:///
050-7449 rev b 10-2005 apt15gp60bdq1 t j = 125 c v r = 400v 7.5a 15a 30a t rr q rr t rr i rrm q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = -55 c t j = 25 c t j = 125 c t j = 150 c duty cycle = 0.5 t j = 175 c t j = 125 c v r = 400v 3530 25 20 15 10 50 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) 15a 7.5a 30a t j = 125 c v r = 400v v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 26. forward current vs. forward voltage figure 27. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 28. reverse recovery charge vs. current rate of change figure 29. reverse recovery current vs. current rate of change t j , junction temperature ( c) case temperature ( c) figure 30. dynamic parameters vs. junction temperature figure 31. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 32. junction capacitance vs. reverse voltage 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 1.21.0 0.8 0.6 0.4 0.2 0.0 9080 70 60 50 40 30 20 10 0 6050 40 30 20 10 0 700600 500 400 300 200 100 0 7.5a 30a 15a 01234 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 1 4 0 0 1600 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 140120 100 8060 40 20 0 2520 15 10 50 q rr downloaded from: http:///
050-7449 rev b 10-2005 typical performance curves apt15gp60bdq1 t0-247 package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 3.55 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) dimensions in millimeters and (inches) 2-plcs. collector(cathode) emitter(anode) gate collector (cathode) apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 33. diode test circuit figure 34, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform apt6017lll downloaded from: http:///
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